Electromigration (EM) and Stress Migration (SM) are reliability concerns for modern day integrated circuits. However, neither mechanism is completely independent of the other, but instead they have a combined impact on the failure behavior of copper interconnects. Due to the differences in the coefficient of thermal expansion (CTE), thermally induced stress is `quenched in' the conductors during processing. The presence of this thermal stress may reduce the amount of stress needed for electromigration to cause failure; hence, reduce lifetime of the interconnect. For this study, we investigated the effect of a temperature anneal on electromigration lifetime. It was found that stress migration may play a significant role in the distribution of the first failure mode or the early failures of the electromigration failure. However, with stress anneals at 250^°C up to 500 hours, it did not have a significant effect on the second failure mode associated with electromigration failure.