Abstract:
Plasma charging damage induced on MOSFETs by a stripping process is compared between two CMOS image sensor technologies. The damage is modulated by the substrate configur...Show MoreMetadata
Abstract:
Plasma charging damage induced on MOSFETs by a stripping process is compared between two CMOS image sensor technologies. The damage is modulated by the substrate configuration. Plasma non-uniformity is electrically characterized to determine the magnitude of the stress induced on the MOSFET. A model of the charging mechanism is finally proposed including the study of the protection diode efficiency and the substrate resistivity impact.
Date of Conference: 31 March 2019 - 04 April 2019
Date Added to IEEE Xplore: 23 May 2019
ISBN Information: