GIDL Increase Due to HCI Stress: Correlation Study of MOSFET Degradation Parameters and Modelling for Reliability Simulation | IEEE Conference Publication | IEEE Xplore

GIDL Increase Due to HCI Stress: Correlation Study of MOSFET Degradation Parameters and Modelling for Reliability Simulation


Abstract:

This work presents a correlation study between gate-induced drain leakage (GIDL) increase and standard n-MOSFET degradation parameters (IDlin and IDsat) due to Hot Carrie...Show More

Abstract:

This work presents a correlation study between gate-induced drain leakage (GIDL) increase and standard n-MOSFET degradation parameters (IDlin and IDsat) due to Hot Carrier Injection (HCI) both for SiON and SiO2 gate nodes. The same mechanism is responsible for the changes in these n-MOSFET parameters, so we propose the use of a unique HCI lifetime model, including the GIDL increase in accumulation. The GIDL parameter degradation can be implemented into aging models in CAD libraries along with the degradation models for standard n-MOSFET parameters. We also discuss model limitations for high-K metal gate (HKMG) devices.
Date of Conference: 31 March 2019 - 04 April 2019
Date Added to IEEE Xplore: 23 May 2019
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Conference Location: Monterey, CA, USA

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