Abstract:
In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and...Show MoreMetadata
Abstract:
In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.
Date of Conference: 28 April 2020 - 30 May 2020
Date Added to IEEE Xplore: 30 June 2020
ISBN Information: