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Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro | IEEE Conference Publication | IEEE Xplore
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Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro


Abstract:

In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and...Show More

Abstract:

In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.
Date of Conference: 28 April 2020 - 30 May 2020
Date Added to IEEE Xplore: 30 June 2020
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Conference Location: Dallas, TX, USA

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