Abstract:
We perform a detailed assessment of different reliability mechanisms in Ru interconnects. We show that full Ru vias have no risk of voiding after long thermal storage (>1...Show MoreMetadata
Abstract:
We perform a detailed assessment of different reliability mechanisms in Ru interconnects. We show that full Ru vias have no risk of voiding after long thermal storage (>1200 h) at high temperature. Our estimate of the electromigration activation energy is ~1.8 eV and, through FA, we associate it to grain boundary diffusion. Conservative lifetime predictions confirm a high JMAX but high self-heating (>100 °C) @JMAX. We venture that Ru JMAX will be limited by the maximum heating allowed at each interconnect level without degrading the chip performance.
Date of Conference: 28 April 2020 - 30 May 2020
Date Added to IEEE Xplore: 30 June 2020
ISBN Information: