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A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation | IEEE Conference Publication | IEEE Xplore

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation


Abstract:

We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. We demonstrate that the results of our test...Show More

Abstract:

We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. We demonstrate that the results of our test procedure reflect most realistically worst-case, end-of-life parameter drifts that occur in typical SiC MOSFET switching applications.
Date of Conference: 21-25 March 2021
Date Added to IEEE Xplore: 26 April 2021
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Conference Location: Monterey, CA, USA

References

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