Abstract:
We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. We demonstrate that the results of our test...Show MoreMetadata
Abstract:
We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. We demonstrate that the results of our test procedure reflect most realistically worst-case, end-of-life parameter drifts that occur in typical SiC MOSFET switching applications.
Date of Conference: 21-25 March 2021
Date Added to IEEE Xplore: 26 April 2021
ISBN Information: