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Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET | IEEE Conference Publication | IEEE Xplore

Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET


Abstract:

Internal and external process variations severely affect the device threshold voltage (\mathrm{V}_{\text{th}}) and, in turn, the device's reliability. For the first tim...Show More

Abstract:

Internal and external process variations severely affect the device threshold voltage (\mathrm{V}_{\text{th}}) and, in turn, the device's reliability. For the first time, this paper presented a thorough analysis of the self-heating aware \mathrm{V}_{\text{th}} variation of a Nanosheet FET and, thus, the device's aging. Using well-calibrated TCAD models, we evaluated the 'change in V_{th}\ ^{\prime} and performed an extensive design space exploration to analyze: (i) the impact of work function (WF) modulation owing to metal grain sizes and effective grains (for confined dimensions) on \mathrm{V}_{\text{th}} variation; (ii) the impact of ambient temperature (TA) on \mathrm{V}_{\text{th}} variation; (iii) the influence of trap charges on device characteristics; (iv) how the consideration of RDF impacted \mathrm{V}_{\text{th}}; (v) the device's aging, i.e., end of a lifetime (EOL). These investigations provided guidelines for designing a reliable Nanosheet FET (NSFET) to investigate and mitigate early aging.
Date of Conference: 26-30 March 2023
Date Added to IEEE Xplore: 15 May 2023
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Conference Location: Monterey, CA, USA

References

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