The suitability of a 12nm FinFET LDMOS offering toward a broad range of applications has been demonstrated. This work focuses on key reliability aspects with respect to usage conditions typical of RF applications. A detailed overview of the impact of well-known degradation mechanisms, such as conductive and non-conductive Hot Carrier Injection and the off-state Time Dependent Dielectric Breakdown is presented. The conflicting requirements of long-life reliability and high time zero performance can be resolved through process and/or design optimization.