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Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited) | IEEE Conference Publication | IEEE Xplore

Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)


Abstract:

Reservoir computing based on the ferroelectric FET (FeFET) technology offers a computational platform for information processing of time-series data with a low computatio...Show More

Abstract:

Reservoir computing based on the ferroelectric FET (FeFET) technology offers a computational platform for information processing of time-series data with a low computational cost by leveraging the nonlinear polarization/charge dynamics. While hafnia/Si FeFETs for a memory application encounter critical challenges on the poor endurance caused by polarization-induced interface degradation, the reservoir computing operation of hafnia/Si FeFETs exhibits a high tolerance to the interface degradation particularly when the system is frequently re-trained. The degradation tolerance can be attributed to the polarization dynamics not being canceled out by the trap dynamics in the time domain during operation of reservoir computing. A degradation-robust FeFET reservoir can be trained to classify spoken-digit dataset, where more than 104 of bipolar voltage inputs were applied during data processing, with high classification accuracy.
Date of Conference: 14-18 April 2024
Date Added to IEEE Xplore: 16 May 2024
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Conference Location: Grapevine, TX, USA

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