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Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence | IEEE Conference Publication | IEEE Xplore

Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence


Abstract:

We evaluate the soft error rate (SER) in 18 nm FDSOI-planar SRAM and investigate the scaling trend of SER in FDSOI-planar. Our findings demonstrate that the SER in 18 nm ...Show More

Abstract:

We evaluate the soft error rate (SER) in 18 nm FDSOI-planar SRAM and investigate the scaling trend of SER in FDSOI-planar. Our findings demonstrate that the SER in 18 nm FDSOI-planar is significantly lower than that of 28 nm FDSOI-planar. The total SER (alpha SER + neutron SER) in SRAM of 18 nm FDSOI-planar is lower than all the bulk-planar and bulk-FinFET technologies. We also examine the temperature dependence of SER in FDSOI-planar.
Date of Conference: 14-18 April 2024
Date Added to IEEE Xplore: 16 May 2024
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Conference Location: Grapevine, TX, USA

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