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Gateless depletion mode field effect transistor for macromolecule sensing | IEEE Conference Publication | IEEE Xplore
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Gateless depletion mode field effect transistor for macromolecule sensing


Abstract:

In this work, we create a gateless, depletion mode field effect transistor that operates as a molecular recognition based electronic sensor. The transistor consists of so...Show More

Abstract:

In this work, we create a gateless, depletion mode field effect transistor that operates as a molecular recognition based electronic sensor. The transistor consists of source and drain diffusions, a depletion-mode implant, and an insulating layer. The insulating layer is chemically modified by immobilized molecular receptors that enable miniaturized label-free molecular detection that is amenable to high-density array formats. Here, we describe the development of a microelectronic multi-sensor capable of reagent-free detection of a variety of biological macromolecules. Moreover, we study the effectiveness of the device for sensing macromolecules (such as proteins or DNA) quantitatively and in real time. Such capability can lead to the early detection of a variety of diseases and toxins including, but not limited to strains of cancer, influenza, and anthrax. The response of the sensor to buffer, proteins, and the antibody antigen-recognition event is also provided.
Date of Conference: 25-28 May 2003
Date Added to IEEE Xplore: 20 June 2003
Print ISBN:0-7803-7761-3
Conference Location: Bangkok, Thailand

References

References is not available for this document.