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Phase noise in a back-gate biased low-voltage VCO | IEEE Conference Publication | IEEE Xplore

Phase noise in a back-gate biased low-voltage VCO


Abstract:

The phase noise in an ultra low-power and low-voltage CMOS voltage controlled oscillator (VCO) has been measured and modelled for supply voltage V/sub DD/ from 1.8 V down...Show More

Abstract:

The phase noise in an ultra low-power and low-voltage CMOS voltage controlled oscillator (VCO) has been measured and modelled for supply voltage V/sub DD/ from 1.8 V down to 80 mV with various body bias voltages V/sub BS/. The VCO is a fully integrated ring oscillator designed in a 0.18 /spl mu/m CMOS technology. In this design, the frequency can be controlled by V/sub BS/. The effects of scaling V/sub DD/ together with the effect of V/sub BS/ on the phase noise are examined experimentally and theoretically. It has been observed that the phase noise at V/sub DD/ >0.5 V is dominated by the upconverted 1/f noise. But the low frequency noise disappears when V/sub DD/ decreases below 0.5 V. Application of forward body bias voltages from 0 to 0.6 V also provides a practical method to suppress the low frequency noise being upconverted to phase noise.
Date of Conference: 25-28 May 2003
Date Added to IEEE Xplore: 20 June 2003
Print ISBN:0-7803-7761-3
Conference Location: Bangkok, Thailand

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