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Performance analysis of high-speed MOS transistors with different layout styles | IEEE Conference Publication | IEEE Xplore

Performance analysis of high-speed MOS transistors with different layout styles


Abstract:

Several layout schemes for MOS transistors have been investigated and compared in terms of speed and layout area. Among them, the so-called closed, donut or doughnut tran...Show More

Abstract:

Several layout schemes for MOS transistors have been investigated and compared in terms of speed and layout area. Among them, the so-called closed, donut or doughnut transistors have been characterized, obtaining an analytical expression for the calculation of the equivalent W/L ratio for a general n-side regular polygonal-shape. The comparisons show that with quasi-minimum dimension transistors and L=0.35 /spl mu/m, reductions of up to 81% on the drain area can be achieved with an increase of only a 10% on the total layout area for given W and L. An application improving the switching speed of an output multiplexer is shown.
Date of Conference: 23-26 May 2005
Date Added to IEEE Xplore: 25 July 2005
Print ISBN:0-7803-8834-8

ISSN Information:

Conference Location: Kobe, Japan

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