A CMOS bandgap voltage reference with absolute value and temperature drift trims | IEEE Conference Publication | IEEE Xplore

A CMOS bandgap voltage reference with absolute value and temperature drift trims


Abstract:

We present a curvature-corrected CMOS bandgap voltage reference with in-package trim of the absolute value and first-order temperature drift during the final test. The tr...Show More

Abstract:

We present a curvature-corrected CMOS bandgap voltage reference with in-package trim of the absolute value and first-order temperature drift during the final test. The trim settings are stored using a poly fuse ROM. The output buffer has a single-stage topology with voltage and current gain boosts, providing 20 /spl mu/V/mA load regulation and frequency stability with any load. The total error of the voltage reference, implemented in the TSMC 0.6 /spl mu/m process, does not exceed 200 ppm in the full temperature (-40/spl deg/C to 125/spl deg/C), supply (1.8 V to 5.5 V) and load (/spl plusmn/10 mA) range.
Date of Conference: 23-26 May 2005
Date Added to IEEE Xplore: 25 July 2005
Print ISBN:0-7803-8834-8

ISSN Information:

Conference Location: Kobe, Japan

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