Abstract:
A single circuit solution using MOSFET alone, has been presented for a voltage sensor. The circuit was implemented in a 0.18 /spl mu/m process for an SRAM application. It...Show MoreMetadata
Abstract:
A single circuit solution using MOSFET alone, has been presented for a voltage sensor. The circuit was implemented in a 0.18 /spl mu/m process for an SRAM application. It was designed to have low temperature sensitivity and good process tuning capability. Experimental results on silicon provided a temperature performance of 435ppm//spl deg/C on the virgin die without trimming.
Date of Conference: 23-26 May 2005
Date Added to IEEE Xplore: 25 July 2005
Print ISBN:0-7803-8834-8
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