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A new high gain low voltage 1.45 GHz CMOS mixer | IEEE Conference Publication | IEEE Xplore

A new high gain low voltage 1.45 GHz CMOS mixer


Abstract:

A new architecture of CMOS downconversion mixer for low voltage and high gain communication applications is proposed. This topology avoids the stacking of transistors bet...Show More

Abstract:

A new architecture of CMOS downconversion mixer for low voltage and high gain communication applications is proposed. This topology avoids the stacking of transistors between the power and ground lines, thus it can work on a low supply voltage. It does not need inductors, so it is relatively easy to fabricate. This mixer is implemented using a 0.25 /spl mu/m CMOS technology with supply voltage of 2 V. With 1.452 GHz LO input and 1.45 GHz RF input, simulation result show that the conversion gain is 15 dB, IIP3 is -4.5 dBm, noise figure is 17 dB, the maximum transient power dissipation is 9.3 mW and DC power dissipation is 9.2 mW. The mixer's noise and linearity analyses are also presented.
Date of Conference: 23-26 May 2005
Date Added to IEEE Xplore: 25 July 2005
Print ISBN:0-7803-8834-8

ISSN Information:

Conference Location: Kobe, Japan

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