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Statistical NBTI-effect prediction for ULSI circuits | IEEE Conference Publication | IEEE Xplore

Statistical NBTI-effect prediction for ULSI circuits


Abstract:

Static statistical variability and time-dependent reliability are traditionally analyzed separately. This paper presents a new methodology which combines both types of va...Show More

Abstract:

Static statistical variability and time-dependent reliability are traditionally analyzed separately. This paper presents a new methodology which combines both types of variability within a single circuit analysis framework. A comprehensive Negative Bias Temperature Instability (NBTI) model was implemented. Effects of random discrete dopants, line edge roughness and poly-Silicon granularity were considered. Using a 74X-series benchmark circuit (4-bit fast-carry adder) as an example, the concept of integrating both static statistical variability and time-dependent reliability into circuit analysis is demonstrated.
Date of Conference: 30 May 2010 - 02 June 2010
Date Added to IEEE Xplore: 03 August 2010
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Conference Location: Paris, France

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