Abstract:
We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputt...Show MoreMetadata
Abstract:
We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores.
Date of Conference: 30 May 2010 - 02 June 2010
Date Added to IEEE Xplore: 03 August 2010
ISBN Information:
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