Abstract:
A 0.5-30GHz wideband differential CMOS T/R switch is proposed with low insertion loss (IL), high power handling capacity and high TX-RX isolation. The independent bias te...Show MoreMetadata
Abstract:
A 0.5-30GHz wideband differential CMOS T/R switch is proposed with low insertion loss (IL), high power handling capacity and high TX-RX isolation. The independent bias technique is proposed to keep the transistors in ideal on/off mode to improve IL and power handling capacity. The leakage cancellation technique is introduced to cancel leakage from TX port to RX port with two match paths. The proposed T/R switch has been implemented in 65nm CMOS, and simulation results show that it achieves 1.2/1.9dB IL and 43/31dBm 1-dB compression point (P1dB) in TX/RX mode and 60dB TX-RX isolation over 0.5-30GHz.
Date of Conference: 24-27 May 2015
Date Added to IEEE Xplore: 30 July 2015
Electronic ISBN:978-1-4799-8391-9