Low Phase Noise Ku-Band VCO with Reduced Frequency Drift Across Temperature | IEEE Conference Publication | IEEE Xplore

Low Phase Noise Ku-Band VCO with Reduced Frequency Drift Across Temperature


Abstract:

A low phase noise Ku-band VCO fabricated in 130 nm BiCMOS technology is presented. The prototype 12.2–13.1 GHz VCO achieves a measured phase noise of −120.6 dBc/Hz at 1 M...Show More

Abstract:

A low phase noise Ku-band VCO fabricated in 130 nm BiCMOS technology is presented. The prototype 12.2–13.1 GHz VCO achieves a measured phase noise of −120.6 dBc/Hz at 1 MHz offset. The VCO core consumes a power of 17.7 mW and attains a Figure of Merit (FOM) of 190. Temperature-compensation techniques are applied to MOSFET bias, switched capacitor bank bias and LDO voltages to reduce VCO frequency drift down to 7.6 MHz over a temperature range of −40°C to 125°C (578.4 ppm).
Date of Conference: 27-30 May 2018
Date Added to IEEE Xplore: 04 May 2018
ISBN Information:
Electronic ISSN: 2379-447X
Conference Location: Florence, Italy

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