In this paper, the minimum operation voltage (Vmin) shifts of static random access memory (SRAM) induced by random telegraph noises (RTN) are extracted from accurate transient simulation results, including the impacts of both strong and weak coupling RTNs. The turning point observed in the relation between the SRAM bitcell Vmin shift and RTN amplitude is explained with the help of the newly-defined discrepancy. Based on the extracted statistical failure probabilities in all bitcells, a new prediction method for RTN induced Vmin shift of SRAM array is proposed, including the interaction with process variation, which indicates that the Vmin shift is actually underestimated by traditional expectation. In addition, the RTN and process variation are found to be the dominate influence factors on Vmin shift under lower and higher VDD, respectively. The results provide accurate evaluation on the impacts of RTN and process variation on SRAM and are helpful for robust SRAM design in nanoscale technology.