A 28.8-GB/s 96-MB 3D-stacked SRAM is presented. A total of eight SRAM dies, designed in a 40-nm CMOS process, are vertically stacked and connected using an inductive coupling wireless link with a low-voltage NMOS push-pull transmitter that reduces the power of the link by 45% with a 0.4-V power supply. The SRAM utilizes an inverted bit insertion scheme that compensates the degradation of the first signal, a coil termination scheme that aims to eliminate the noise of 3D inductive coupling bus, and a 12:1 SerDes. The data density of the SRAM should reach 12.3-MB/mm³, which extends beyond that of state-of-the-art stacked DRAMs.