The ion-sensitive field-effect transistor (ISFET) has emerged as an ideal candidate to carry out point-of-care diagnosis through detection of hydrogen ions produced during amplification of pathogenic DNA. This group has previously hypothesised that ISFET-based DNA detection could be enhanced by positioning DNA close to the ISFET surface using electrodes that carry out low-power manipulation of DNA through dielectrophoresis (DEP). This paper provides a proof-of-concept for an ISFET-DEP system for DNA detection, combining information gathered from the literature and FEM electric field simulations to test the validity of the hypothesis and highlight key challenges in implementation. An electrode system was designed with sets of line and rectangular castellated interdigitated electrodes that produced simulated maximum electric field strengths between 2.58 – 7.70 × 10⁵ Vm⁻¹ and is capable of trapping DNA with applied voltages as low as (0.50 ± 0.05)V. Using this design, a 180nm CMOS prototype was developed for preliminary testing, containing three 5 × 2 arrays of 20μm × 20μm ISFETs as part of an 800μm × 400μm chip.