This paper reviews the development of compact modeling technology of MOSFETs for RF (Radio Frequency) and millimeter wave applications. Thanks to the recent renovation of measurement techniques it is possible to generate big data on the basis of automated S-parameter measurement. Accordingly, MOSFETs' compact models are already capable of providing accurate statistical simulation by the use of big data. In this paper, unique approach to revise existing MOSFETs' compact models is demonstrated. Our study has shown proposed model can give accurate statistical distribution of high frequency behavior of MOSFETs via single device level and circuit level.