This paper presents characteristics of the GaN HEMT and proposes controlled switching of the GaN Power HEMT. An experimental implementation is described, experimental current drive switching results presented and a closed loop control strategy is suggested. Simulation results are presented, and the paper gives full details of the circuits used. Controlled di/dt and dV/dt is obtained using closed loop GaN HEMT switching. The advantages of GaN HEMT devices are discussed in comparison with Super Junction Si MOSFETs and conclusions drawn regarding the performance and use of GaN Power Transistors.