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Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM) | IEEE Conference Publication | IEEE Xplore

Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)


Abstract:

We proposed a combined magnetic and circuit level technique to explore the design methodology of Spin-Torque Transfer RAM (SPRAM). A dynamic magnetic model of magnetic tu...Show More

Abstract:

We proposed a combined magnetic and circuit level technique to explore the design methodology of Spin-Torque Transfer RAM (SPRAM). A dynamic magnetic model of magnetic tunneling junction (MTJ), which is based upon measured spin torque induced magnetization switching behavior, is also proposed. The response of CMOS circuitry is characterized by SPICE and used as the input of our MTJ model to simulate the dynamic behavior of SPRAM cell. By using this technique, we explored the design margin of SPRAM cell with one-transistor-one-MTJ (1T1J) structure. Simulation results show that our technique can significantly reduce the design pessimism, compared to conventional SRPAM cell model.
Date of Conference: 17-19 March 2008
Date Added to IEEE Xplore: 31 March 2008
Print ISBN:978-0-7695-3117-5

ISSN Information:

Conference Location: San Jose, CA, USA

References

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