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Design of a CMOS readout circuit for wide-temperature range capacitive MEMS sensors | IEEE Conference Publication | IEEE Xplore

Design of a CMOS readout circuit for wide-temperature range capacitive MEMS sensors


Abstract:

We present a capacitance readout interface circuit in bulk CMOS process which is functional at wide temperature range between -55oC to 175oC. The proposed circuit uses a ...Show More

Abstract:

We present a capacitance readout interface circuit in bulk CMOS process which is functional at wide temperature range between -55oC to 175oC. The proposed circuit uses a sigma-delta technique to convert capacitance ratio into a digital output and is suitable to provide a high-accuracy digitized output for capacitive MEMS sensors. The circuit is implemented using IBM 0.13μm CMOS technology. Simulation results show that the circuit has excellent stability over wide temperature range, as high as 0.1% accuracy between -55oC to 175oC.
Date of Conference: 03-05 March 2014
Date Added to IEEE Xplore: 07 April 2014
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Conference Location: Santa Clara, CA, USA

References

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