Abstract:
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block c...Show MoreMetadata
Abstract:
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks
Date of Conference: 06-09 February 2006
Date Added to IEEE Xplore: 18 September 2006
Print ISBN:1-4244-0079-1
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