Abstract:
Multi-gate FETs are promising for sub-45nm CMOS technologies. To address the link between design and technology, basic digital and analog circuits are fabricated using Fi...Show MoreMetadata
Abstract:
Multi-gate FETs are promising for sub-45nm CMOS technologies. To address the link between design and technology, basic digital and analog circuits are fabricated using FinFET and triple-gate FETs. Digital circuit performance, leakage currents, and power dissipation are characterized. The triple-gate FET achieves the lowest gate delay (27ps at 1.2V) and is >30% faster than FinFET with same oxide thickness of 2nm and gate lengths of 80nm. A FinFET-based Miller OpAmp achieves 45dB dc gain at 1.5V
Date of Conference: 06-09 February 2006
Date Added to IEEE Xplore: 18 September 2006
Print ISBN:1-4244-0079-1