The uses of terahertz systems (300 GHz to 3 THz) in radars, remote sensing, advanced imaging, and bio-agent and chemical detection have been extensively studied. A compact and low-cost signal source is a key circuit block of terahertz systems. Traditionally, the circuits have been built using highly optimized III-V technologies. With the advances of CMOS, it has become realistic to consider terahertz circuits in CMOS. This paper reports a signal source operating near 410 GHz that is fabricated using low-leakage transistors in a 6 M 45 nm digital CMOS technology.