Abstract:
A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pou...Show MoreMetadata
Abstract:
A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pout = 0.5 mW into 32 ¿. At higher power level, the smooth transition between the voltage supply rails allows a THD+N better than -80 dB for Pout ¿ 16 mW into 32 ¿. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm2.
Date of Conference: 07-11 February 2010
Date Added to IEEE Xplore: 18 March 2010
ISBN Information:
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