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A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology | IEEE Conference Publication | IEEE Xplore

A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology


Abstract:

ReRAM has been considered as one of the potential technologies for the next-generation nonvolatile memory, given its fast access speed, high reliability, and multi-level ...Show More

Abstract:

ReRAM has been considered as one of the potential technologies for the next-generation nonvolatile memory, given its fast access speed, high reliability, and multi-level capability. Multiple-layered architectures have been used for several megabit test-chips and memory macros [1-3]. This paper presents a MeOx-based 32Gb ReRAM test chip developed in 24nm technology.
Date of Conference: 17-21 February 2013
Date Added to IEEE Xplore: 28 March 2013
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Conference Location: San Francisco, CA, USA

References

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