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40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data | IEEE Conference Publication | IEEE Xplore

40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data


Abstract:

This paper presents 40nm eFlash macros for automotive. There are three key features; 1) a 40nm SG-MONOS cell scaled to the next generation of [1]; 2) a fast random-read-a...Show More

Abstract:

This paper presents 40nm eFlash macros for automotive. There are three key features; 1) a 40nm SG-MONOS cell scaled to the next generation of [1]; 2) a fast random-read-access (over 160MHz) and the developed sense amplifier (SA); and, 3) circuit techniques for reliable and fast P/E operations even at the junction temperature (Tj) of 170°C.
Date of Conference: 17-21 February 2013
Date Added to IEEE Xplore: 28 March 2013
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Conference Location: San Francisco, CA, USA

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