Abstract:
STT-MRAM has been emerging as a very-promising high-density embedded nonvolatile memory (eNVM) [1, 2]. Embedded Flash memory has been the leading eNVM technology, but STT...Show MoreMetadata
Abstract:
STT-MRAM has been emerging as a very-promising high-density embedded nonvolatile memory (eNVM) [1, 2]. Embedded Flash memory has been the leading eNVM technology, but STT-MRAM has been developed as a better solution for continuing scaling, speed and cost. This paper presents a write-verify-write (WvW) scheme and a programmable offset cancellation sensing technique that achieves a high-yield, high-performance and high-endurance 7Mb STT-MRAM arrays in a 22FFL FinFET technology [3]. The developed technology supports a wide range of operating temperatures between -40 - 105°C. Compared to priorart [4,5], the two-stage current-sensing technique with a die-by-die tuning of a thin-film precision resistor that is used as a reference can significantly improve the sensing margin during verify and read operations. Read disturb for reference cells is eliminated as there is no MTJ in the reference path.
Date of Conference: 17-21 February 2019
Date Added to IEEE Xplore: 07 March 2019
ISBN Information: