An improved envelope amplifier architecture for envelope tracking RF power amplifiers is presented, consisting of two switching amplifiers and one linear amplifier. The first switching amplifier and the linear amplifier provide wideband and high-efficiency operation, while the second switching amplifier provides a reduced bandwidth variable supply to the linear amplifier to further reduce power loss. The first switching amplifier and the linear amplifier are fabricated together in a 150 nm CMOS process, while the second switching amplifier is external. Measurements show a maximum average efficiency of 82% for a 10 MHz LTE signal with a 6 dB PAPR at 29.7 dBm output power and an SFDR of 63 dBc for a single tone of 5 MHz driving an 8 Ω load.