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A 1.5 mW 68 dB SNDR 80 Ms/s 2- Interleaved Pipelined SAR ADC in 28 nm CMOS | IEEE Journals & Magazine | IEEE Xplore

A 1.5 mW 68 dB SNDR 80 Ms/s 2 \times Interleaved Pipelined SAR ADC in 28 nm CMOS


Abstract:

This paper presents a power-efficient 80 MS/s, 11 bit ENOB ADC. It is realized in 28 nm CMOS and is based on two interleaved pipelined SAR ADCs. It includes an on-chip re...Show More

Abstract:

This paper presents a power-efficient 80 MS/s, 11 bit ENOB ADC. It is realized in 28 nm CMOS and is based on two interleaved pipelined SAR ADCs. It includes an on-chip reference generator and does not require any external components. The total power dissipation is 1.5 mW, resulting in a low-frequency Walden FOM of 9.1 fJ/conv-step and a low-frequency Schreier FOM of 172.2 dB, which is the largest FOM reported to date for sampling frequencies larger than 1 MS/s. The key aspects in achieving this excellent power efficiency include the choice of ADC architecture, integrator-based amplifiers used for noise filtering, the finite settling of the reference voltage during the SAR conversion, and the modified DAC switching scheme to reduce the DAC switching energy.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 49, Issue: 12, December 2014)
Page(s): 2835 - 2845
Date of Publication: 23 October 2014

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