This paper describes an MOSFET-only voltage reference realized in 65-nm CMOS featuring a temperature coefficient (TC) of 5.6 ppm/°C from -40 °C to 125 °C, a power supply rejection ratio of 87 dB from dc up to 800 kHz (and 75 dB at 1 MHz), a minimum supply voltage of 0.8 V, and a power dissipation of 13 μW. These attributes are achieved by exploiting the zero-TC point of an MOSFET and combining it with a novel curvature-compensation technique, an active attenuator, and an impedance-adapting frequency compensation scheme.