The gallium nitride (GaN)-on-Si low-side gate driver proposed in this article has four main features: First, the self-pumped drive enhance (SPDE) technique achieves fast transients. Second, short-period negative voltage (SPNV) technique avoids the Miller coupling effect and improves efficiency. Third, a dual-mode Voltage regulator ensures sufficient current and minimizes power dissipation. Finally, monolithic low-side gate drivers provide robust drive capability. This work can suppress the ringing caused by high dV / dt of $V_{\mathrm {DS}}$ , thereby minimizing the tail time $T_{\mathrm {tail}}$ , achieving a $14.7\times$ reduction in tailing current loss, suppressing abnormal conduction, and reducing reverse conduction loss by 37.0%.