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SPICE level analysis of Single Event Effects in an OxRRAM cell | IEEE Conference Publication | IEEE Xplore

SPICE level analysis of Single Event Effects in an OxRRAM cell


Abstract:

As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Sing...Show More

Abstract:

As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.
Date of Conference: 03-05 April 2013
Date Added to IEEE Xplore: 18 July 2013
ISBN Information:
Print ISSN: 2373-0862
Conference Location: Cordoba, Argentina

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