Abstract:
As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Sing...Show MoreMetadata
Abstract:
As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.
Published in: 2013 14th Latin American Test Workshop - LATW
Date of Conference: 03-05 April 2013
Date Added to IEEE Xplore: 18 July 2013
ISBN Information:
Print ISSN: 2373-0862