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Decreasing EEPROM programming bias with negative voltage, reliability impact | IEEE Conference Publication | IEEE Xplore

Decreasing EEPROM programming bias with negative voltage, reliability impact


Abstract:

This paper presents a study of EEPROM cell programming in order to decrease the bias polarization of the memory cell. Simulations show that it is possible to erase and wr...Show More

Abstract:

This paper presents a study of EEPROM cell programming in order to decrease the bias polarization of the memory cell. Simulations show that it is possible to erase and write a cell with a divide up polarization, with positive and negative pulses. Measurements on a memory cell confirm these statements. Moreover simulations of the electrical field through the tunnel oxide didn't show any change of the maximum value, that means there is no impact on cell reliability. Endurance tests were performed on several memory cells with divide up polarizations. They show the same results as classical programming.
Date of Conference: 12-12 July 2002
Date Added to IEEE Xplore: 07 November 2002
Print ISBN:0-7695-1617-3
Print ISSN: 1087-4852
Conference Location: Bendor, France

References

References is not available for this document.