This paper presents a CMOS short pulse generator with a high-voltage stacked MOSFET switch, which is developed to overcome the low breakdown voltage limitations of CMOS processes. The six stacked MOSFET switch is fabricated in a commercial 0.13 μm CMOS process. The measurement results agree with simulation results reasonably well. A CMOS short pulse generator circuit with 5 mm pulse-forming-line (PFL) is also implemented with the switch. Pulses of ~2.44 V amplitude and ~122 ps duration on a 50 Ω load are obtained after de-embedding the connection system. The discrepancies between measurements and anticipated results (i.e. 4.8 V output with 77 ps pulse duration) include measurement connection system and parasitic effects.