Spin based memories have garnered major interest in recent times. With all of the alluring features like-non-volatility, zero-stand by leakage and dense integration in array, they suffer from not having satisfactory distinguishability between stored memory states. Recently, a novel approach of using Phase transition materials (PTM) to assist magnetic tunnel junction (MTJ) in spin memories has been proposed. This paper presents an overview of the design approach, challenges and benefits of two proposed ways of designing PTM assisted spin memories. One of the approach that uses a PTM in parallel to MTJ in read path is only applicable for memories with separate read-write paths. This approach can achieve over 1.7X better distinguishability in stored data, at least 20% increase in read stability and 4X larger sense margin (SM). On the other hand, another design which uses PTM in series with MTJ can be used for a broader spectrum of cell topologies and achieves over 17X boost in cell tunneling magneto resistance with 45% higher read stability and ∼60% more SM. No area penalties are associated with either of these techniques.