Abstract:
This paper, proposes a new memristor-based NAND/NOR logic gates using convert Voltage to Memristance (VTM) method. Universal logic gates with similar structure require tw...Show MoreMetadata
Abstract:
This paper, proposes a new memristor-based NAND/NOR logic gates using convert Voltage to Memristance (VTM) method. Universal logic gates with similar structure require two different input voltages in order to program the gate to NAND or NOR functions. The proposed structure consists of two input terminals memristors (Min), and one output memristor (Mout). Gate inputs are voltages and the logic value of Mout is the output. Also, other logic gates such as NOT, AND/OR, XOR and XNOR can be implemented using this approach. All of the digital gates and proposed circuits are evaluated using SPICE model of bipolar memristive system with a given threshold. Simulation results show improvement in operation step of the logic gates, higher switching speed, and lower power consumption compared with previous works.
Date of Conference: 09-11 August 2021
Date Added to IEEE Xplore: 13 September 2021
ISBN Information: