Temperature-dependence electrical performance of GaAs-based HEMT-embedded accelerometer | IEEE Conference Publication | IEEE Xplore

Temperature-dependence electrical performance of GaAs-based HEMT-embedded accelerometer


Abstract:

In this paper, it is researched that how I-V characteristics and piezoresistance coefficient of GaAs-based HEMT-embedded accelerometer change when different temperatures ...Show More

Abstract:

In this paper, it is researched that how I-V characteristics and piezoresistance coefficient of GaAs-based HEMT-embedded accelerometer change when different temperatures are set. It is shown that saturation current of device would go down if the temperature goes up, which is about 3.1467mA/°C, based on the research. However, the device can work well at the temperature range of -50°Cto 50°C, which indicates that it can work safely in the larger temperature range. Piezoresistance coefficient is also in down trend with the temperature rising, that it, it has negative temperature coefficient which is about 0.74%/°C, and it's sensitivity is higher than Si.
Date of Conference: 20-23 January 2010
Date Added to IEEE Xplore: 30 September 2010
ISBN Information:
Conference Location: Xiamen, China

References

References is not available for this document.