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Study of silicon nitride film embedded with silicon quantum dots | IEEE Conference Publication | IEEE Xplore

Study of silicon nitride film embedded with silicon quantum dots

Publisher: IEEE

Abstract:

This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich ...View more

Abstract:

This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich nitride films that deposited in the same PECVD deposition program. We could find the sample that went through high annealed temperature and sufficient annealed time, such as annealed at 1000°C for 1 hour, would get better dots size at about 5 nm.
Date of Conference: 20-23 February 2011
Date Added to IEEE Xplore: 12 September 2011
ISBN Information:
Publisher: IEEE
Conference Location: Kaohsiung, Taiwan

References

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