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Fabrication of deep lateral single-crystal-silicon blaze micro-grating by Inductively-Coupled-Plasma Reactive Ion Etch | IEEE Conference Publication | IEEE Xplore

Fabrication of deep lateral single-crystal-silicon blaze micro-grating by Inductively-Coupled-Plasma Reactive Ion Etch


Abstract:

This paper presents a method by using a compensative structure assisted to fabricate deep lateral single-crystal-silicon (SCS) blaze micro-grating at Inductively-Coupled-...Show More

Abstract:

This paper presents a method by using a compensative structure assisted to fabricate deep lateral single-crystal-silicon (SCS) blaze micro-grating at Inductively-Coupled-Plasma Reactive Ion Etch (ICP-RIE). Due to the high resolution of blaze micro-grating, it's hard to maintain the teeth structure of blaze micro-grating under deep silicon etch in ICP-RIE process. Here, the independent rectangular structure and symmetrical structure to micro-grating is designed to obstruct the non-vertical plasma ion to etch the sidewall of micro-grating structure and to get better the profile control at deep micro-grating structure. The lateral silicon blaze micro-grating with 100 μm thickness by compensative structure assisted etch process have been successfully demonstrated this method.
Date of Conference: 05-08 March 2012
Date Added to IEEE Xplore: 10 May 2012
ISBN Information:
Conference Location: Kyoto, Japan

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