Abstract:
We find that the Electrolyte-Oxide-Semiconductor (EOS) structure, which is utilized a lot in micro/nanofluidic devices, is not perfectly insulated as previously believed....Show MoreMetadata
Abstract:
We find that the Electrolyte-Oxide-Semiconductor (EOS) structure, which is utilized a lot in micro/nanofluidic devices, is not perfectly insulated as previously believed. There is a significant leakage current through the insulator, and the I-V relationship shows one-way conductivity like a diode. We build a model considering the implantation of ions under forward bias and formation of conductive filaments in the oxide layer. Samples with oxide layers of different thicknesses and various fabrication processes were tested to verify our hypotheses. This structure provides a simple means to fabricate half-fluidic diodes, and can be utilized for ion detection and current control in microfluidic devices.
Published in: The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Date of Conference: 07-10 April 2013
Date Added to IEEE Xplore: 18 July 2013
ISBN Information: