Thermal-mechanical reliability analysis of connection structure between redistribution layer and TSV for MEMS packaging | IEEE Conference Publication | IEEE Xplore

Thermal-mechanical reliability analysis of connection structure between redistribution layer and TSV for MEMS packaging

Publisher: IEEE

Abstract:

This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in M...View more

Abstract:

This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in MEMS packaging, which results in a reliability risk between redistribution layer (RDL) and TSV. There are three important factors which may have the most serious influence on the reliability being simulated and analyzed. They are the opening diameter of RDL in insulation layer, the thickness of cylindrical copper and the thickness of insulation layer at the bottom of TSV. It is significant to understand the effect of the three factors and get the optimum structure parameters which can reduce the effect of the risky connection structure on the package reliability obviously.
Date of Conference: 17-20 April 2016
Date Added to IEEE Xplore: 01 December 2016
ISBN Information:
Publisher: IEEE
Conference Location: Sendai, Japan

References

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