Abstract:
This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in M...View moreMetadata
Abstract:
This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in MEMS packaging, which results in a reliability risk between redistribution layer (RDL) and TSV. There are three important factors which may have the most serious influence on the reliability being simulated and analyzed. They are the opening diameter of RDL in insulation layer, the thickness of cylindrical copper and the thickness of insulation layer at the bottom of TSV. It is significant to understand the effect of the three factors and get the optimum structure parameters which can reduce the effect of the risky connection structure on the package reliability obviously.
Published in: 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
Date of Conference: 17-20 April 2016
Date Added to IEEE Xplore: 01 December 2016
ISBN Information: