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Endurance prediction and error Reduction in NAND flash using machine learning | IEEE Conference Publication | IEEE Xplore

Endurance prediction and error Reduction in NAND flash using machine learning


Abstract:

The following topics are dealt with: random-access storage; integrated circuit modelling; magnetic tunnelling; MRAM devices; chalcogenide glasses; neural nets; hafnium co...Show More

Abstract:

The following topics are dealt with: random-access storage; integrated circuit modelling; magnetic tunnelling; MRAM devices; chalcogenide glasses; neural nets; hafnium compounds; thermal stability; integrated circuit design; resistive RAM.
Date of Conference: 30 August 2017 - 01 September 2017
Date Added to IEEE Xplore: 11 December 2017
ISBN Information:
Conference Location: Aachen, Germany

References

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