Abstract:
In this paper a MMIC Low-Noise Amplifier operating in Ka-band is presented. The chosen technology is a 100 nm GaN HEMT on a High Resistivity Silicon substrate. A fully de...Show MoreMetadata
Abstract:
In this paper a MMIC Low-Noise Amplifier operating in Ka-band is presented. The chosen technology is a 100 nm GaN HEMT on a High Resistivity Silicon substrate. A fully deterministic approach based on constant mismatch circles has been used for the preliminary synthesis of matching networks. The designed four-stages LNA presents a 33 dB gain, Input/Output matching better than 21 dB and a Noise Figure of no more than 2.3 dB in the whole operating band, showing the suitability of the chosen technology to low-noise, high gain and linearity applications.
Date of Conference: 15-18 July 2019
Date Added to IEEE Xplore: 05 August 2019
ISBN Information: